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| APM2070P P-Channel Enhancement Mode MOSFET Features * * * * -20V/-5A , RDS(ON)=78m(typ.) @ VGS=-10V RDS(ON)=113m(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description G D S Top View of TO-252 5 Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. / , , Ordering and Marking Information APM 2070P L e a d F re e C o d e H a n dlin g C o d e Tem p. R ange P ackage C ode P-Channel MOSFET P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rg in a l D e v ic e X X X X X - D a te C o d e A P M 2070P U : A P M 2070P XXXXX Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25C unless otherwise noted) Rating -20 16 -5 -20 Unit V A Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed IDM ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM2070P Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG * RJA (TA = 25C unless otherwise noted) Rating Unit W C C C/W Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient TA=25C TA=100C 50 10 150 -55 to 150 50 * Surface Mounted on FR4 Board, t 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD = > = (TA = 25C unless otherwise noted) APM2070P Typ. Max. Min. -20 -1 -0.7 -0.9 78 113 -0.7 17 4 5.2 13 36 45 37 504 147 118 pF 25 67 83 69 -1.5 100 102 150 -1.3 22 nC Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Test Condition Unit VGS=0V , IDS=-250A VDS=-16V , VGS=0V VDS=VGS , IDS=-250A VGS=16V , VDS=0V VGS=-10V , IDS=-5A VGS=-4.5V , IDS=-2.8A IS=-0.5A , VGS=0V VDS=-10V , IDS=-5A VGS=-4.5V VDD=-10V , IDS=-5A , VGEN=-4.5V , RG=6 V A V nA m V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance ns VGS=0V Output Capacitance VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2 www.anpec.com.tw APM2070P Typical Characteristics 20 Output Characteristics 20 Transfer Characteristics -VGS= 5,6,7,8,9,10V -ID-Drain Current (A) -VGS=4V 12 -ID-Drain Current (A) 16 16 Tj=125 C Tj=25 C 8 Tj=-55 C 4 o o o 12 8 -VGS=3V 4 -VGS=2V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 On-Resistance vs. Drain Current 0.150 -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance () 1.50 1.25 1.00 0.135 0.120 0.105 0.090 0.075 0.060 0.045 0 4 8 12 16 20 -VGS=10V -VGS=4.5V 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (C) -ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 3 www.anpec.com.tw APM2070P Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.24 1.8 -ID= 5A On-Resistance vs. Junction Temperature -VGS = 4.5V -IDS = 5A RDS(ON)-On-Resistance () 0.20 0.16 0.12 RDS(ON)-On-Resistance () (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0.08 0.04 0.00 1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 10 700 -VDS= 10 V -IDS= 5 A 600 Capacitance Frequency=1MHz Ciss -VGS-Gate-Source Voltage (V) 8 Capacitance (pF) 480 360 240 120 6 4 Coss Crss 0 4 8 12 16 20 2 0 0 5 10 15 20 25 30 35 QG - Total-Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 4 www.anpec.com.tw APM2070P Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 10 Single Pulse Power 200 160 120 80 40 0 1E-4 -IS-Source Current (A) Tj=150 C 1 o 0.1 0.0 Tj=25 C o Power (W) 0.4 0.8 1.2 1.6 1E-3 0.01 0.1 1 10 100 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D= t1/t2 2.Per Unit Base=RthJA=50 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted o 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 5 www.anpec.com.tw APM2070P Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 b e1 C A1 L Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 APM2070P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) Preheat temperature 125 25C) Temperature maintained above 183C Time within 5C of actual peak temperature Peak temperature range Ramp-down rate Time 25C to peak temperature 3C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0C or 235 +5/-0C 6 C /second max. 6 minutes max. VPR 10 C /second max. 60 seconds 215~ 219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bags Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 7 APM2070P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 Bo D W F Ao D1 T2 Ko J A C B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 1.5 0.25 J 2 0.5 Po 4.0 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 0.1 T2 2.5 0.5 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 8 www.anpec.com.tw APM2070P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 9 www.anpec.com.tw |
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